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Product Detailed Parameters
- Description：IGBT 1200V 30A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.75mJ (off)
- Input Type：Standard
- Gate Charge：69 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT15N120BD1 is a HiPerFAST IGBT module manufactured by IXYS, featuring an integrated fast recovery diode. It operates with a collector-emitter voltage of 1200V and a continuous collector current of 15A at 25°C. The device utilizes the D3PAK-3 (TO-268) surface-mount package. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.2V and a typical turn-off time of 140ns. It supports a maximum junction temperature of 175°C and offers a power dissipation capacity of 150W.
Feature Summary
- Integrates a high-speed IGBT with a complementary fast recovery diode in a single component.
- Utilizes HiPerFAST technology to achieve low switching losses and reduced conduction voltage.
- Designed for standard JEDEC TO-268 surface-mount packaging to facilitate automated assembly.
Applications
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies
- DC choppers
- AC motor speed control
Procurement Notes
Verify the specific suffix 'D1' against the manufacturer datasheet to confirm the inclusion of the integrated diode, as non-diode variants exist within the same series. Ensure the ordering quantity aligns with the manufacturer's tube packaging specifications. Confirm RoHS compliance status for the specific production batch prior to final procurement decisions.
Selection Notes
Select this component when a compact surface-mount solution is required for high-voltage switching applications. The integrated diode simplifies circuit design by eliminating the need for external freewheeling components. Consider the thermal resistance characteristics of the D3PAK package for heat sink sizing in high-power density designs.
Part Context
This part belongs to the IXYS HiPerFAST family, which focuses on optimizing the trade-off between switching speed and conduction loss. The D3PAK package provides a balance between thermal performance and PCB space efficiency compared to through-hole alternatives like TO-247.
Replacement Considerations
The IXGT15N120B is a similar variant but lacks the integrated diode. Verify if the application requires the internal diode functionality before substituting. Other HiPerFAST devices may offer different current ratings or package styles.
