SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGT15N120C is a HiPerFAST IGBT manufactured by IXYS, designed for high-power switching applications. It features a single N-channel configuration housed in an isolated TO-247AD package suitable for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 30 A. Key electrical parameters include a low saturation voltage of 2.8 V at 30 A and a gate threshold voltage ranging from 3.0 V to 5.0 V. It operates within a junction temperature range of -55°C to +150°C, ensuring reliability in demanding thermal environments.
Verify the specific suffix against official datasheets to confirm pinout and packaging variations. Ensure the supplier provides valid RoHS compliance documentation. Confirm that the component status is active for new designs, as legacy variants may be discontinued or recommended against use.
Select this component for applications requiring robust 1200V blocking capability with moderate current handling. The TO-247AD package offers a balance between thermal performance and mechanical simplicity. Evaluate thermal management requirements based on the specified saturation voltage and expected duty cycles.
This part belongs to the HiPerFAST family of insulated gate bipolar transistors. It represents a silicon-based solution optimized for medium-frequency switching. The series is engineered to provide superior performance compared to standard IGBTs in terms of switching speed and conduction losses.
Cross-reference with IXYS models such as IXGT15N120B or IXGT15N120BD1 for similar specifications. Verify compatibility with existing gate drive circuits and thermal interface materials before substitution.