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The IXGT16N170 is a single NPT silicon IGBT manufactured by IXYS, housed in a D3PAK-3 (TO-268-3) surface-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 32 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.7 V and a maximum power dissipation of 190 W. Operating temperatures range from -55°C to +150°C junction temperature. Key electrical limits include a gate-emitter voltage range of ±20 V and a leakage current of 100 nA.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm electrical parameters match specifications. Inspect packaging integrity upon receipt to ensure no physical damage occurred during transit. Confirm RoHS compliance status if required by specific project regulations.
Select this component when a 1.7 kV rating and 32 A continuous current are required in a surface-mount configuration. Ensure the application circuit can handle the 190 W power dissipation with adequate heatsinking. Compare against lower voltage variants if system requirements allow for reduced insulation levels.
This part belongs to the IXYS IXGT series of high-voltage IGBTs. It shares the D3PAK-3 package with other devices in the lineup but differs in voltage and current ratings. The series targets applications needing reliable switching in harsh environments.
No official substitutes are listed. Verify pin compatibility and thermal resistance characteristics before considering alternative manufacturers. Ensure any replacement matches the 1.7 kV voltage rating and TO-268-3 footprint.