IXGT16N170A

IXGT16N170A

$15.86
  • Description:IGBT NPT 1700V 16A TO-268AA
  • Series:-

SKU:db782a1a454a Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 1700V 16A TO-268AA
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):40 A
  • Vce(on) (Max) @ Vge, Ic:5V @ 15V, 11A
  • Power - Max:190 W
  • Switching Energy:900µJ (off)
  • Input Type:Standard
  • Gate Charge:65 nC
  • Td (on/off) @ 25°C:36ns/160ns
  • Test Condition:850V, 16A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package:TO-268AA
  • Grade:-
  • Qualification:-

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IXGT16N170A

Overview

The IXGT16N170A is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a D3PAK-3 (TO-268-3) surface-mount package designed for high-power applications. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 16 A at 25°C, with a peak pulsed current rating of 40 A. Key electrical parameters include a collector-emitter saturation voltage of 5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 190 W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • High-voltage capability rated at 1.7 kV for robust operation in demanding power circuits.
  • Surface-mount D3PAK-3 packaging facilitates automated assembly and compact board layout.
  • Optimized saturation voltage characteristics contribute to efficient conduction performance.

Applications

  • Industrial motor drive inverters
  • Uninterruptible power supply (UPS) systems
  • High-frequency welding equipment

Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity and traceability. Confirm that the received units match the IXGT16N170A designation exactly, as suffixes may indicate variations in testing or packaging standards. Cross-reference the part number against the official IXYS datasheet to validate all electrical specifications before integration into production designs.

Selection Notes

Select this component when a single IGBT with 1.7 kV blocking voltage and 16 A continuous current is required in a surface-mount form factor. Ensure the thermal management design can handle the 190 W power dissipation limit. Compare the 5 V saturation voltage against alternative packages like TO-247 if lower on-state losses are critical for the specific application efficiency targets.

Part Context

This device belongs to the IXYS IGBT transistor portfolio, specifically categorized under single N-channel insulated gate bipolar transistors. It is part of the broader family of high-voltage switching components designed for industrial and commercial power conversion applications. The D3PAK-3 package distinguishes it from through-hole variants within the same voltage class.

Replacement Considerations

The IXBT16N170A is a related single IGBT with identical 1.7 kV and 16 A ratings but utilizes a different package configuration. Verify pinout compatibility and thermal resistance differences before substituting. No other direct equivalent part numbers are confirmed in the provided documentation.

IXGT16N170AIXGT16N170A
$15.86
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