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The IXGT20N60B is a HiPerFAST IGBT manufactured by IXYS, designed for medium-speed switching applications. It features a single N-channel configuration housed in a TO-268 (D2PAK) surface-mount package. The device supports a collector-emitter breakdown voltage of 600 V and delivers a continuous collector current of 40 A at 25°C. Typical saturation voltage is 1.7 V, with a turn-off fall time of approximately 100 ns. These specifications make it suitable for power conversion circuits requiring robust current handling and efficient thermal management.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and lead times through authorized distributors. Cross-reference pinouts and thermal characteristics with PCB layout specifications before finalizing procurement orders.
Select this component for designs requiring 600V blocking capability with 40A continuous current in a surface-mount form factor. Ensure the gate drive circuit provides appropriate voltage levels and that the thermal management system can dissipate the specified power losses. Evaluate switching frequency requirements against the typical fall time to minimize switching losses effectively.
This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. It shares architectural similarities with other 600V devices in the series but differs in packaging and current ratings. The TO-268 variant offers distinct thermal and mechanical advantages over through-hole alternatives like the TO-247 version.
Direct replacements include the IXGH20N60BU1S for through-hole applications or the IXYS 20N60BD1 if an integrated freewheeling diode is required. Verify pinout compatibility and thermal resistance values when substituting with equivalent parts from other manufacturers.