IXGT24N60CD1

Overview

The IXGT24N60CD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 24 A at 25°C. The device utilizes GenX3 technology to achieve a low saturation voltage of 1.8 V under standard test conditions. It is housed in a TO-268AA surface-mount package, designed for high-power switching applications with a maximum power dissipation of 275 W.

Feature Summary

• GenX3 trench technology for optimized performance
• Low saturation voltage for reduced conduction losses
• Surface-mount TO-268AA package design

Applications

• High-frequency power inverters
• Switch-mode power supplies
• Motor control drives

Procurement Notes

Verify the specific suffix CD1 against official datasheets to confirm pinout and thermal characteristics. Check manufacturer notices for end-of-life status or recommended replacements before finalizing procurement plans.

Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling. Ensure the PCB layout supports the TO-268AA footprint and provides adequate thermal management for the specified power dissipation limits.

Part Context

This part belongs to the IXYS IGBT discrete transistor family. It shares the 600V voltage class common in industrial power electronics but differs from MOSFETs in its bipolar conduction mechanism and lower on-state voltage drop at higher currents.

Replacement Considerations

Direct substitutes include IXGH24N60C4. Cross-brand alternatives such as STGW20N60KD may require evaluation of pin compatibility and thermal resistance differences.