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Product Detailed Parameters
- Description：IGBT NPT 2500V 60A TO-268HV
- Series：-
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 25A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：68ns/209ns
- Test Condition：1250V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：233 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXGT)
- Grade：-
- Qualification：-
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Overview
The IXGT25N250-T/R is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench Field-Stop technology and is designed for high-voltage applications up to 650V, with specific variants rated at 2500V. The device features a TO-268AA (D2PAK) surface-mount package suitable for automated assembly. Key electrical parameters include a collector-emitter voltage of 2500V or 650V depending on the specific datasheet variant, a continuous collector current ranging from 35A to 60A, and a power dissipation capability of approximately 250W. The component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Trench Field-Stop technology for optimized switching performance
- Square Reverse Bias Safe Operating Area (RBSOA)
- Low gate charge characteristics for efficient drive requirements
- Surface-mount D2PAK package design
Applications
- Capacitor discharge applications
- High-frequency inverter circuits
- Power supply modules requiring high voltage isolation
Procurement Notes
Verify the exact voltage rating (650V vs 2500V) and current handling capacity against the specific datasheet revision, as the part number may correspond to different series variants. Confirm the tape-and-reel packaging specification matches the intended SMT production line requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under operating conditions.
Selection Notes
Select this component when a surface-mount IGBT with high voltage blocking capability and robust short-circuit withstand ability is required. The Trench Field-Stop technology offers advantages in switching speed and conduction losses compared to older planar technologies. Consider the thermal resistance of the TO-268AA package and the need for appropriate PCB copper area for heat sinking.
Part Context
This part belongs to IXYS's portfolio of high-voltage IGBTs, specifically leveraging Trench technology. It is distinct from standard planar IGBTs due to its improved safe operating area and switching characteristics. The product line targets industrial and consumer applications demanding reliable high-power switching in compact surface-mount form factors.
Replacement Considerations
Cross-reference with other IXYS Trench IGBTs in the same voltage class. Verify pinout compatibility and thermal characteristics before substituting with competing manufacturers' devices offering similar voltage and current ratings.
