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Product Detailed Parameters
- Description：IGBT NPT 2500V 60A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 25A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT25N250 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 2500 V and a continuous collector current of 25 A at 25°C. The device utilizes High Voltage eXtended Punch-Through (HV XPT) technology to optimize switching performance and conduction losses. It is housed in a TO-247-3 package with a maximum power dissipation of 315 W. The saturation voltage is typically 3.4 V, and the gate-emitter voltage limits are ±20 V. Operating temperatures range from -55°C to +175°C.
Feature Summary
- High voltage capability utilizing HV XPT technology for optimized trade-off between conduction and switching losses.
- Square Reverse Bias Safe Operating Area (RBSOA) ensuring robust operation under short-circuit conditions.
- Designed for high-efficiency power conversion applications requiring low on-state voltage drop.
Applications
- High-voltage DC-DC converters
- Induction heating systems
- Uninterruptible Power Supplies (UPS)
- Motor drive inverters
Procurement Notes
Verify the specific suffix code against the manufacturer's datasheet to confirm pinout configuration and thermal characteristics. Ensure the ordering part number matches the exact package variant required for your PCB footprint or heatsink interface. Cross-reference RoHS compliance status directly with the official documentation before procurement.
Selection Notes
Select this component for circuits requiring 2500V blocking capability with moderate current handling up to 25A. Consider the thermal resistance of the TO-247 package when designing heat sinking solutions. Evaluate the switching frequency requirements against the device's turn-on and turn-off times to ensure efficiency targets are met without excessive switching losses.
Part Context
This IGBT belongs to IXYS' high-voltage discrete transistor portfolio, specifically designed for industrial power electronics. It complements lower voltage MOSFETs and other IGBT series by providing a solution for medium-power, high-voltage applications where silicon carbide devices may be cost-prohibitive.
Replacement Considerations
Check for direct replacements within the IXYS IXGT series with similar voltage and current ratings. Verify compatibility with existing gate drive voltages and thermal management infrastructure. No official substitute part numbers are listed in the provided data; consult the manufacturer for qualified alternatives.
