IXGT28N120B

Description：IGBT PT 1200V 50A TO-268AA
Series：-

SKU:617956a68cf7 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 50A TO-268AA
Series：-
Mfr：IXYS
Package：Box
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 28A
Power - Max：250 W
Switching Energy：2.2mJ (off)
Input Type：Standard
Gate Charge：92 nC
Td (on/off) @ 25°C：30ns/210ns
Test Condition：960V, 28A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：TO-268AA
Grade：-
Qualification：-

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IXGT28N120B

Overview

The IXGT28N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and features a TO-263HV-3 surface-mount package designed for through-hole compatibility. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 28 A at 25°C. It operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 300 W.

Feature Summary

High-voltage capability suitable for resonant power supply applications
Surface-mount package design compatible with standard mounting techniques
Robust thermal performance for industrial environments

Applications

Resonant power supplies
Induction heating systems
Rice cookers

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-263HV-3 package dimensions match the target PCB footprint requirements. Ensure that gate drive circuitry is compatible with the specified voltage limits to prevent device damage during operation.

Selection Notes

Select this component when a high-voltage IGBT is required in a compact surface-mount form factor. The 1.2 kV rating makes it suitable for mains-connected or high-inductive load applications. Consider the 28 A continuous current limit and 300 W power dissipation capabilities against the expected thermal management constraints of the final assembly design.

Part Context

This part belongs to the IXYS IGBT portfolio, specifically engineered for high-voltage switching applications. It shares functional similarities with other devices in the series but is distinguished by its specific current rating and package type. The component is designed to replace older through-hole equivalents while maintaining electrical performance standards for consumer and industrial power electronics.