IXGT28N60BD1

Description：IGBT 600V 40A TO-268AA
Series：-

SKU:3716e5e84ad7 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-268AA
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 28A
Power - Max：150 W
Switching Energy：2mJ (off)
Input Type：Standard
Gate Charge：68 nC
Td (on/off) @ 25°C：15ns/175ns
Test Condition：480V, 28A, 10Ohm, 15V
Reverse Recovery Time (trr)：25 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：TO-268AA
Grade：-
Qualification：-

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IXGT28N60BD1

Overview

The IXGT28N60BD1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, housed in a surface-mount TO-268AA package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A. The device has a maximum power dissipation of 150 W and an on-state collector-emitter voltage of 2 V at 15 V gate drive and 28 A collector current. Switching characteristics include a turn-off time of 175 ns and a reverse recovery time of 25 ns for the integrated diode. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Integrated fast recovery diode for efficient commutation
Surface-mount construction for automated assembly
Standard input type with low gate charge

Applications

Motor control drives
Switch-mode power supplies
Inverter circuits

Procurement Notes

This component is obsolete and no longer manufactured. Verification of availability requires checking authorized distributors for remaining stock or approved substitute part numbers. Ensure that any replacement components meet the original electrical specifications and thermal requirements before integration into existing designs.

Selection Notes

Designers should evaluate direct replacements from the same manufacturer family or similar high-voltage IGBTs with compatible pinouts. Consider switching speed, saturation voltage, and thermal resistance when selecting alternatives. Verify that the substitute device supports the required operating temperature range and packaging style for the target application.

Part Context

The IXGT28N60BD1 belongs to IXYS' standard IGBT lineup, designed for medium-power switching applications. It combines the high efficiency of bipolar transistors with the easy drive of MOSFETs. The TO-268AA package provides a compact solution for surface-mount PCB layouts, balancing thermal performance with space constraints in industrial electronics.

Replacement Considerations

Direct substitutes include IXGT30N120B3D1. Similar alternatives are STGW30H65FB. Verify electrical compatibility and mounting requirements before substitution.