IXGT30N60B2

Overview

The IXGT30N60B2 is a medium-speed, low saturation voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 product family and utilizes Punch-Through (PT) technology. The device features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 30A at 25°C. It exhibits a typical saturation voltage of 1.8V and a fast reverse recovery time characteristic. Designed for switching applications operating between 5 kHz and 40 kHz, it is housed in a TO-268AA (D3PAK-3) surface-mount package.

Feature Summary

• GenX3 Punch-Through Technology
• Medium-Speed Switching Characteristics
• Low Saturation Voltage Design

Applications

• Motor Drives
• Switch Mode Power Supplies
• Inverters

Procurement Notes

Verify the specific suffix 'B2' against the manufacturer datasheet to confirm pinout and electrical parameters. Ensure the component matches the required TO-268AA package dimensions for PCB layout compatibility. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.

Selection Notes

Select this component for designs requiring moderate switching speeds up to 40 kHz with efficient conduction losses. Compare the 1.8V saturation voltage against higher-speed alternatives if thermal management is constrained. Verify that the 600V breakdown voltage provides adequate margin for the target DC bus voltage.

Part Context

This IGBT is part of the IXYS GenX3 series, which integrates advanced trench gate technology with punch-through collector design. The series targets industrial power conversion applications where a balance between switching speed and conduction efficiency is critical. The TO-268AA package facilitates automated surface-mount assembly.

Replacement Considerations

Publicly confirmed direct substitutes include the IXGH30N60B2D1 and IXGT30N60B. Verify pinout compatibility and thermal resistance specifications when evaluating these alternatives.