IXGT30N60B2D1

Overview

The IXGT30N60B2D1 is a HiPerFAST IGBT with an integrated diode manufactured by IXYS. It features a TO-247AD flange mount package with three terminals. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, a fall time of 190 ns, and a gate-emitter threshold voltage maximum of 5 V. The maximum gate-emitter voltage is rated at 20 V.

Feature Summary

• HiPerFAST technology for optimized switching performance
• Integrated fast recovery anti-parallel diode
• Flange mount construction for efficient thermal management

Applications

• High frequency power supplies
• Motor drive inverters
• Uninterruptible power systems (UPS)

Procurement Notes

Verify the manufacturer part number against official IXYS documentation to confirm specifications. Check for RoHS compliance status and lead times through authorized distributors. Ensure the TO-247AD package matches the design requirements for mounting and thermal dissipation.

Selection Notes

Select this component for applications requiring 600V blocking capability and moderate current handling. The TO-247AD package suits designs needing robust heat sinking. Compare saturation voltage and switching speed against alternative IGBTs to ensure compatibility with the specific circuit topology and thermal constraints.

Part Context

This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. These devices are designed for high-efficiency power conversion. The model integrates a fast diode, simplifying circuit design for inductive loads. It represents a standard solution for medium-power industrial electronics.

Replacement Considerations

Direct substitutes may include other 600V 30A IGBTs in TO-247 packages from IXYS or other manufacturers. Verify pinout compatibility and thermal resistance values before substitution.