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Product Detailed Parameters
- Description：IGBT PT 1200V 75A TO-268AA
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：230 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 32A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：89 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT32N120A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-268-3 surface-mount package designed for through-hole or SMD installation. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.35 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with 1.2 kV blocking voltage for robust switching applications
- Optimized low saturation voltage for reduced conduction losses
- Surface-mount compatible TO-268-3 package for efficient thermal management
Applications
- Motor control systems
- Industrial inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix against official IXYS documentation to confirm pinout and thermal characteristics. Ensure the component matches the required TO-268-3 footprint and lead configuration for your PCB design. Cross-reference datasheet revisions to validate performance metrics under your specific operating conditions.
Selection Notes
Select this component when a high-current, high-voltage IGBT is required in a surface-mount form factor. Compare the 2.35 V saturation voltage against alternative packages to evaluate thermal efficiency. Confirm that the 300 W power dissipation rating aligns with your heatsinking strategy and ambient temperature constraints.
Part Context
This part belongs to the IXGT series of IXYS IGBTs, which are engineered for medium to high-power industrial applications. The TO-268-3 package distinguishes it from standard TO-247 discrete devices, offering different mounting and thermal interface requirements while maintaining similar electrical performance profiles within the 1200V class.
Replacement Considerations
Publicly confirmed direct substitute part numbers are not available in the provided source material. Verify compatibility with any potential replacements by matching the TO-268-3 package, 1.2 kV voltage rating, and 75 A current capacity.
