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The IXGT32N170-TRL is a single NPT silicon IGBT from the IXYS IXGT series, housed in a D3PAK-3 (TO-268-3) surface-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C, with a peak pulsed current rating of 200 A. The device exhibits a typical collector-emitter saturation voltage of 3.3 V at 15 V gate drive. Power dissipation reaches 350 W, operating within a junction temperature range of -55°C to +150°C. This component utilizes standard gate control with ±20 V limits.
Verify the specific suffix against manufacturer documentation to confirm reel-based packaging versus tube variants. Ensure the ordering code matches the required tape-and-reel configuration for automated assembly lines. Cross-reference the exact part number with official datasheets to validate electrical parameters before procurement.
Select this component when high voltage handling and moderate current capacity are required in a compact surface-mount form factor. Compare the 3.3 V saturation voltage against system efficiency targets. Evaluate the 350 W power dissipation capability relative to available heatsinking solutions and ambient thermal conditions.
This device belongs to the IXYS IXGT family of high-voltage IGBTs. It shares the 1.7 kV rating and TO-268-3 footprint with other models like the IXGT32N170, differing primarily in the TRL suffix indicating reel packaging. It serves as a discrete switching element for medium-to-high power conversion applications.
Direct substitutes include the IXGT32N170, which shares identical electrical specifications but typically comes in tube packaging. Verify pinout compatibility and thermal resistance values when transitioning between packaging styles.