IXGT32N170

Overview

The IXGT32N170 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a D3PAK-3 (TO-268-3) surface-mount package designed for high-power applications. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C, with a peak pulsed current rating of 200 A. It exhibits a typical collector-emitter saturation voltage of 3.3 V. Power dissipation capability reaches 350 W, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

• High-voltage blocking capability suitable for demanding power switching environments
• Surface-mount construction facilitating automated assembly processes
• Robust thermal performance allowing operation up to 150°C junction temperature

Applications

• Industrial motor drive inverters
• Uninterruptible power supply (UPS) systems
• High-frequency welding equipment

Procurement Notes

Verify the specific manufacturing source and authenticity upon acquisition. Confirm compliance with RoHS and REACH regulations as indicated in official documentation. Ensure storage conditions maintain component integrity prior to soldering. Review the latest datasheet for any updates regarding pin configuration or absolute maximum ratings before integration into final designs.

Selection Notes

Select this component when a single IGBT with 1.7 kV blocking voltage and approximately 75 A continuous current capacity is required in a surface-mount form factor. Consider the 3.3 V saturation voltage for conduction loss calculations. Evaluate thermal management requirements against the 350 W dissipation limit. Compare against alternative packages if board space constraints differ from the D3PAK-3 footprint.

Part Context

This part belongs to the IXYS IXGT series of NPT (Non-Punch Through) technology IGBTs. These devices are engineered for medium to high-power applications requiring reliable switching characteristics. The series typically includes variants with different current ratings and saturation voltages to suit diverse circuit design needs while maintaining standardized packaging options.

Replacement Considerations

Direct substitutes may include other IXYS single IGBTs in the TO-268-3 package with compatible 1.7 kV ratings. Verify electrical parameters such as Vce(sat), Ic, and switching times against the original specifications. Cross-reference with equivalent offerings from other manufacturers ensuring identical pinout and thermal resistance values.