IXGT32N60BD1

Overview

The IXGT32N60BD1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, designed for high-power switching applications. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 32 A at 25°C. The device utilizes the HiPerFAST HDMOSTM process to achieve low saturation voltage and fast switching characteristics. Packaged in a TO-268AA surface-mount format with an integrated antiparallel Fast Recovery Epitaxial Diode (FRED), it offers high power density and simplified thermal management. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates a high-frequency IGBT and an antiparallel FRED diode within a single package to reduce space requirements.
• Utilizes the HiPerFAST HDMOSTM process technology to ensure high current handling capability and low switching losses.
• Features a surface-mount TO-268AA package suitable for automated assembly and efficient heat dissipation.

Applications

• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed control systems
• DC servo and robot drives
• DC choppers

Part Context

This component belongs to the IXYS HiPerFAST series, which focuses on medium-speed, low Vsat PT IGBTs optimized for switching frequencies between 5 kHz and 40 kHz. The 'BD1' suffix typically indicates the inclusion of an integrated antiparallel diode, distinguishing it from standard single IGBT variants like the IXGH32N60B.

Replacement Considerations

Direct substitutes include the IXGH32N60BD1 or IXGH32N60BU1. Alternative packages such as TO-247AD versions may require mechanical adaptation but offer similar electrical performance. Verify pinout compatibility when replacing surface-mount TO-268 devices with through-hole equivalents.