IXGT32N60C

Overview

The IXGT32N60C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-268-3 (D3PAK-3) surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 32 A at 25°C. Its collector-emitter saturation voltage is specified at 4 V. The component operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 250 W.

Feature Summary

• Single configuration for high-power switching applications
• Surface-mount D3PAK-3 package design
• Silicon-based semiconductor construction

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics directly with the manufacturer or authorized distributors before integration. Confirm that the TO-268-3 footprint matches the target PCB layout requirements. Ensure thermal management solutions are adequate for the 250 W power dissipation rating under expected operating conditions.

Selection Notes

Select this component when a surface-mount IGBT with 600 V blocking capability and 32 A continuous current is required. Compare the 4 V saturation voltage against alternative devices to ensure acceptable conduction losses. Verify that the gate drive voltage compatibility aligns with the system's control logic levels.

Part Context

This part belongs to the IXGT series of IGBTs from IXYS, designed for general-purpose power switching. It shares the TO-268-3 package form factor with other devices in the family but differs in current and voltage ratings. The series targets applications requiring robust performance in compact surface-mount designs.

Replacement Considerations

Direct substitutes include the IXGT32N60A3. Verify pinout compatibility and electrical parameters such as Vce(sat) and Ic before substitution.