IXGT32N90B2D1

Description：IGBT 900V 64A TO-268AA
Series：HiPerFAST™

SKU:d6727518dc0a Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 900V 64A TO-268AA
Series：HiPerFAST™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：64 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 32A
Power - Max：300 W
Switching Energy：2.2mJ (off)
Input Type：Standard
Gate Charge：89 nC
Td (on/off) @ 25°C：20ns/260ns
Test Condition：720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr)：190 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：TO-268AA
Grade：-
Qualification：-

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IXGT32N90B2D1

Overview

The IXGT32N90B2D1 is a B2-Class High Speed Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It integrates an ultrafast diode and features a TO-268 package for through-hole mounting. The device supports a maximum collector-emitter breakdown voltage of 900V and a continuous collector current of 64A, with a pulsed current rating of 128A. Power dissipation is rated at 300W under specified conditions. Operating junction temperature ranges from -55°C to +150°C. This component utilizes MOS gate technology for simplified drive requirements.

Feature Summary

High frequency operation capability
High current handling capacity
Integrated ultrafast diode
MOS gate structure for simple drive

Applications

High frequency power switching circuits
Industrial motor drives
Power supply inverters

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official IXYS documentation before integration. Confirm that the TO-268 package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the 300W power dissipation rating. Check for any recent product change notices or lifecycle status updates from the manufacturer.

Selection Notes

Select this component for applications requiring high voltage blocking and fast switching speeds within a robust through-hole package. Consider the integrated ultrafast diode for freewheeling requirements. Evaluate thermal resistance parameters for heat sink design. Compare performance metrics against alternative IGBTs if lower on-state voltage drop is critical.

Part Context

This part belongs to the IXYS B2-Class series of high-speed IGBTs. The series is designed for demanding power electronics applications where efficiency and switching speed are prioritized. The TO-268 package provides mechanical stability and efficient heat transfer compared to smaller surface-mount options.