IXGT40N120B2D1

IXGT40N120B2D1

  • Description:IGBT PT 1200V 75A TO-268AA
  • Series:-

SKU:58012888f262 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 1200V 75A TO-268AA
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):75 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:3.5V @ 15V, 40A
  • Power - Max:380 W
  • Switching Energy:4.5mJ (on), 3mJ (off)
  • Input Type:Standard
  • Gate Charge:138 nC
  • Td (on/off) @ 25°C:21ns/290ns
  • Test Condition:960V, 40A, 2Ohm, 15V
  • Reverse Recovery Time (trr):100 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package:TO-268AA
  • Grade:-
  • Qualification:-

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IXGT40N120B2D1

Overview

The IXGT40N120B2D1 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It utilizes silicon technology and features a TO-268-3 (D3PAK) surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a power dissipation rating of 380 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Single configuration IGBT utilizing silicon technology for high-voltage switching applications.
  • Surface-mount D3PAK-3 package design facilitating automated assembly processes.
  • High thermal performance capability with a 380 W power dissipation rating.

Applications

  • Industrial motor drive systems
  • Uninterruptible power supply (UPS) circuits
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'D1' against official datasheets to confirm pinout compatibility and thermal characteristics, as variations may exist within the series. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the manufacturer part number directly with the original IXYS documentation to avoid counterfeit components. Confirm that the TO-268-3 package dimensions match the target PCB footprint requirements prior to ordering.

Selection Notes

Select this component when a surface-mount solution is required for high-current applications up to 75 A. The 1.2 kV rating makes it suitable for medium-voltage industrial environments. Compare the 3.5 V saturation voltage against system efficiency targets. Evaluate the thermal resistance of the TO-268-3 package against available heatsinking options. Consider the -55°C to +150°C operating range for harsh environmental conditions.

Part Context

This device belongs to the IXGT series of IGBTs from IXYS, designed for general-purpose power switching. It complements other variants in the family such as the IXGT30N120B3D1 and IXGT35N120B, offering higher current capacity than lower-rated models while maintaining similar package footprints for potential design flexibility within product lines.

Replacement Considerations

Direct substitutes include the IXGT30N120B3D1 for lower current requirements or the IXGT35N120B for similar performance in through-hole packages. Verify pinout compatibility and thermal specifications before swapping with any alternative part numbers from different manufacturers.

IXGT40N120B2D1IXGT40N120B2D1

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