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The IXGT45N120 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-268-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current rating of 90 A. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V and a gate-emitter voltage range of -20 V to +20 V. Thermal performance specifications indicate a power dissipation capacity of 400 W, with an operating temperature range spanning from -55 °C to +150 °C.
Verify the specific datasheet revision and manufacturing lot details upon receipt to ensure compliance with technical specifications. Confirm that the component matches the TO-268-3 package dimensions and pinout configuration required by the target circuit design. Check for any obsolescence notices or lifecycle status updates from the manufacturer before finalizing procurement plans.
Select this component when a single IGBT with 1.2 kV blocking voltage and 90 A continuous current handling is required. The TO-268-3 package facilitates direct board mounting or heatsink attachment. Ensure the driving circuit can accommodate the specified gate-emitter voltage limits and provide adequate thermal management to maintain junction temperatures within the 150 °C maximum limit during peak load conditions.
This part belongs to the IXGT series of high-power IGBTs from IXYS, designed for medium to high-power conversion applications. The series typically offers a balance of low conduction losses and fast switching speeds. The TO-268-3 package provides a cost-effective solution for industrial applications requiring reliable high-voltage switching without the complexity of module integration.
Consult official IXYS documentation for verified cross-reference part numbers. Ensure any substitute maintains identical voltage ratings, current capabilities, and package compatibility.