SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGT60N60 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 60 A at 25 °C. The device utilizes a TO-247AD-3 package for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V and a gate-emitter threshold voltage ranging from 3 V to 5 V. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific datasheet revision and manufacturer documentation before integration, as product specifications may vary between production batches. Confirm that the TO-247AD-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under your operating conditions.
Select this component when a 600V rated IGBT with a 60A continuous current capacity is required. The TO-247AD-3 package facilitates reliable through-hole assembly and effective heat sinking. Consider the 1.9V saturation voltage for conduction loss calculations in medium-power inverter designs where efficiency and thermal management are critical constraints.
This part belongs to the IXYS IXGT series of high-performance IGBTs designed for industrial and commercial power conversion. The series emphasizes low saturation voltages to minimize energy losses during operation. These transistors are engineered for durability in demanding environments, supporting applications that require robust switching capabilities and stable performance over wide temperature ranges.
Cross-reference with IXGH60N60 or IXGN60N60 for potential equivalents. Verify pinout compatibility and thermal resistance values before substitution.