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The IXGT60N60B2 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS, now part of Littelfuse. It belongs to the HiPerFAST B2-Class series, featuring an electrically isolated back surface for enhanced thermal performance and high power density. The device is rated for a collector-emitter voltage (V_CES) of 600 V and a continuous collector current (I_C) of 60 A at 25°C. It utilizes a TO-268AA (D3PAK-3) package designed for surface mount applications. Key electrical parameters include a maximum collector-emitter saturation voltage (V_CE(sat)) of 1.9 V and a gate-emitter threshold voltage range typically between 3 V and 5 V.
Verify the manufacturer status as IXYS assets were acquired by Littelfuse. Confirm the specific revision or suffix if available in official documentation. Ensure the component source is traced to authorized distributors to avoid counterfeit parts. Check for RoHS compliance data in the latest datasheet version.
Select this component for applications requiring high switching speeds and low conduction losses in the 600V class. The TO-268AA package is suitable for PCB-mounted designs where space efficiency is critical. Compare V_CE(sat) and gate charge specifications against alternative IGBTs to ensure compatibility with existing driver circuits and thermal management systems.
This device is part of the IXYS HiPerFAST family, specifically the B2-Class line which introduced electrically isolated back surfaces. This design separates the thermal path from the electrical ground, allowing for higher power density and simplified cooling solutions compared to standard non-isolated packages.