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Product Detailed Parameters
- Description：IGBT PT 600V 64A TO-268
- Series：GenX3™
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：64 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 50A
- Power - Max：460 W
- Switching Energy：1.5mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：168 nC
- Td (on/off) @ 25°C：25ns/138ns
- Test Condition：480V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr)：41 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268
- Grade：-
- Qualification：-
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Overview
The IXGT64N60B3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series. It utilizes Silicon technology and features a TO-247AD-3 package designed for through-hole mounting. The device has a maximum collector-emitter voltage of 600 V and a continuous collector current of 92 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 250 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- GenX3 technology providing optimized switching performance
- Soft recovery fast diode integrated in common emitter configuration
- Designed for high reliability in industrial applications
Applications
- Motor drives
- Switched-mode power supplies
- High frequency inverters
Procurement Notes
Verify the specific suffix 'TRL' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status with the manufacturer or authorized distributor prior to procurement. Ensure the ordering quantity aligns with reel specifications if bulk purchasing is required.
Selection Notes
Select this component for circuits requiring 600V blocking capability and moderate current handling up to 92A. The TO-247AD-3 package facilitates efficient thermal management via direct heatsink mounting. Consider the 1.8V saturation voltage for conduction loss calculations in medium-frequency switching applications.
Part Context
This part belongs to the IXYS GenX3 IGBT family, which integrates a fast soft-recovery anti-parallel diode. The series is engineered for improved efficiency in hard-switching applications compared to previous generations, offering a balance between low conduction losses and controlled switching behavior.
Replacement Considerations
Direct pin-compatible replacements within the same voltage and current class should be verified against datasheet parameters. Cross-reference with other GenX3 variants like IXGH36N60B3 for lower current needs, ensuring package and thermal characteristics match the design constraints.
