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The IXGT6N170 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a D3PAK-3 (TO-268-3) surface-mount package designed for high-voltage switching applications. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 6 A at 25°C, with a peak pulsed current rating of 12 A. Key electrical parameters include a collector-emitter saturation voltage of 4 V and a power dissipation capacity of 75 W. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific ordering suffix and manufacturing date code upon purchase to ensure compliance with current RoHS directives and REACH regulations. Confirm that the supplier provides original manufacturer documentation or traceability records. Check for any recent Product Change Notices (PCNs) regarding packaging or material composition updates before finalizing procurement orders.
Select this component when a single IGBT with 1.7 kV blocking voltage and moderate current handling is required in a surface-mount form factor. Ensure the thermal management solution can dissipate up to 75 W while maintaining the junction temperature within the specified -55°C to +150°C operating range. Verify gate drive requirements align with the standard 20 V maximum rating.
This part belongs to the IXYS IXGT series of NPT (Non-Punch-Through) technology IGBTs. The series is characterized by stable switching behavior and high reliability in medium-power applications. The TO-268-3 package is commonly used in consumer and industrial electronics where space constraints favor surface-mount technologies over through-hole alternatives.
Direct pin-compatible replacements may include other 1.7 kV IGBTs in the TO-268-3 package from IXYS or other manufacturers, provided the saturation voltage and current ratings meet or exceed the original specifications. Always verify switching times and gate charge characteristics to ensure compatibility with existing driver circuits.