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Product Detailed Parameters
- Description：IGBT 1700V 6A TO-268
- Series：-
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：14 A
- Vce(on) (Max) @ Vge, Ic：7V @ 15V, 3A
- Power - Max：75 W
- Switching Energy：590µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：18.5 nC
- Td (on/off) @ 25°C：46ns/220ns
- Test Condition：850V, 6A, 33Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268
- Grade：-
- Qualification：-
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Overview
The IXGT6N170A-TRL is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS BIMOSFET family, housed in a TO-268-3 (D3PAK-3) surface-mount package. It features a maximum collector-emitter voltage of 1700 V and a continuous collector current of 14 A at 25°C. The device exhibits a collector-emitter saturation voltage of 7 V and a power dissipation rating of 75 W. Operating within a temperature range of -55°C to +150°C junction temperature, it includes a gate-emitter leakage current of 100 nA. This component is supplied in reel packaging with a factory quantity of 400 units.
Feature Summary
- High-voltage capability rated for 1700 V collector-emitter breakdown
- Robust thermal performance supporting operation up to 150°C junction temperature
- Surface-mount construction utilizing the D3PAK-3 package for automated assembly
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- High-frequency switching power supplies
Procurement Notes
Verify the specific suffix designation against the manufacturer's official documentation to confirm the reel packaging configuration and ensure compliance with RoHS standards. Confirm that the ordering quantity aligns with the standard factory pack size of 400 units to avoid partial reel handling issues during procurement.
Selection Notes
Select this component when a high-voltage IGBT is required for surface-mount applications involving currents up to 14 A. Ensure the design accommodates the 75 W power dissipation limit and the 7 V saturation voltage characteristics. Verify that the PCB layout supports the thermal requirements of the D3PAK-3 package for reliable operation under load.
Part Context
This part belongs to the IXYS BIMOSFET series, which integrates IGBT technology with specific packaging solutions for industrial electronics. The IXGT6N170A variant represents a standard high-voltage discrete transistor option within the broader IXYS portfolio designed for robust power switching environments.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Engineers should evaluate alternative IXYS models such as the IXGT6N170 or IXGT6N170A (tube version) based on pin compatibility and electrical ratings. Cross-compatibility requires verification of package dimensions and thermal resistance values.
