IXGT6N170AHV-TRL

Overview

The IXGT6N170AHV-TRL is a single N-channel Silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-268-3 (D3PAK) surface-mount package designed for high-voltage applications. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 6 A at 25°C, with a peak pulsed current rating of 14 A. Key electrical parameters include a collector-emitter saturation voltage of 7 V and a power dissipation capacity of 75 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• High Voltage Capability: Rated for 1.7 kV collector-emitter breakdown voltage suitable for demanding power switching environments.
• Surface Mount Design: Utilizes the TO-268-3 package configuration to facilitate automated SMD/SMT assembly processes.
• Robust Thermal Performance: Engineered to handle up to 75 W of power dissipation while maintaining operation at junction temperatures reaching +150°C.

Applications

• Industrial motor drives and inverter systems
• High-frequency switch-mode power supplies
• Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm the exact reel packaging quantity and tape specifications. Ensure that the ordering quantity aligns with the manufacturer's standard reel multiples to avoid partial shipment discrepancies. Cross-reference the RoHS compliance status directly with the latest datasheet revision before finalizing procurement orders.

Selection Notes

Select this component when a single IGBT with 1.7 kV blocking capability is required in a surface-mount form factor. Compare the 7 V saturation voltage against alternative devices to ensure thermal management requirements are met within the 75 W dissipation limit. Confirm that the TO-268-3 footprint matches the target PCB layout constraints and that the 6 A continuous current rating satisfies the circuit load demands.

Part Context

This part belongs to the IXYS IXGT series of high-voltage IGBTs, which are engineered for efficient power conversion. The 'HV' suffix typically denotes enhanced voltage handling or specific process variations within the lineup. It serves as a surface-mount alternative to through-hole packages like the TO-247, offering similar electrical performance in a compact profile for modern electronics manufacturing.

Replacement Considerations

Direct pin-compatible replacements may include other IXYS models in the TO-268-3 package with matching 1.7 kV ratings, such as the IXGT6N170A. Verify that any substitute maintains identical saturation voltage characteristics and gate charge parameters to preserve switching timing and thermal performance in existing designs.