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Product Detailed Parameters
- Description：IGBT NPT 2500V 60A PLUS-220SMD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：5.2V @ 15V, 75A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PLUS-220SMD
- Supplier Device Package：PLUS-220SMD
- Grade：-
- Qualification：-
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Overview
The IXGV25N250S is a single N-channel enhancement mode power MOSFET manufactured by IXYS. It utilizes High Voltage XPT (Extended Plate Technology) to achieve a collector-emitter breakdown voltage of 2500V. The device supports a continuous collector current of 25A at 25°C and handles a maximum power dissipation of 375W. It features a low saturation voltage of 4.1V and operates within a junction temperature range of -55°C to +175°C. The component is housed in an insulated TO-247AD package designed for through-hole mounting.
Feature Summary
- High voltage capability enabled by XPT technology for optimized trade-off between on-state voltage and blocking performance
- Insulated metal tab construction providing electrical isolation from the heatsink
- Fast switching characteristics suitable for high-frequency hard-switching applications
Applications
- High voltage DC-DC converters
- Induction heating systems
- Resonant converter topologies
Procurement Notes
Verify the specific suffix against the manufacturer datasheet to confirm pinout compatibility and thermal resistance values. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring robust 2500V blocking capabilities with moderate current handling. The TO-247AD package facilitates efficient thermal management via direct screw mounting. Evaluate the gate charge specifications against your driver capabilities to ensure adequate switching speed without excessive losses.
Part Context
This device belongs to IXYS's high-voltage IGBT portfolio, specifically engineered for demanding industrial power conversion environments. It represents a standard solution for medium-power inverters where reliability under high electrical stress is critical. The product line emphasizes durability and consistent performance across wide operating temperature ranges.
Replacement Considerations
Direct substitutes include the IXGH25N250A and IXGX25N250H3. Verify that alternative part numbers maintain identical pin configurations and thermal interface dimensions to avoid mechanical redesigns during replacement.
FAQ
What is the maximum repetitive peak reverse voltage rating?
The device is rated for a maximum collector-emitter voltage of 2500V.
Does the package provide electrical isolation?
Yes, the TO-247AD package includes an electrically isolated metal tab for safe heatsink attachment.
