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Product Detailed Parameters
- Description：IGBT NPT 1700V 170A PLUS247
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：170 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 100A
- Power - Max：830 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：425 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX100N170 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum continuous collector current of 600 A and a collector-emitter voltage rating of 1700 V. The device utilizes silicon technology and is housed in a TO-247AD package with three pins for through-hole mounting. Key electrical specifications include a maximum gate-emitter voltage of ±30 V, a maximum collector-emitter saturation voltage of 4 V, and a power dissipation capacity of 937 W. The operational temperature range spans from -55°C to +175°C.
Feature Summary
- High-current capability with a 600 A continuous collector current rating
- Robust high-voltage performance rated at 1700 V collector-emitter voltage
- Extended thermal operation supporting junction temperatures up to 175°C
- Integrated anti-parallel diode functionality within the BIMOSFET structure
Applications
- Industrial motor drives and variable frequency drives
- High-power welding equipment inverters
- Uninterruptible power supply (UPS) systems
- Induction heating applications
Procurement Notes
Verify component authenticity against official IXYS documentation prior to integration. Confirm that the specific lot matches the required thermal and electrical characteristics for the target application. Ensure handling procedures comply with electrostatic discharge protocols. Cross-reference datasheet revisions to guarantee compatibility with existing circuit designs and safety standards.
Selection Notes
Select this component for circuits requiring high current switching at elevated voltages. The TO-247AD package facilitates efficient heat dissipation for high-power density designs. Evaluate thermal management requirements carefully due to significant power dissipation. Ensure gate drive signals remain within the specified ±30 V limit to prevent device damage during operation.
Part Context
This IGBT belongs to the IXYS High Voltage series, designed for demanding power electronics applications. It combines MOSFET input characteristics with IGBT output benefits. The device is part of a broader portfolio of discrete semiconductors intended for industrial and energy conversion systems where reliability under stress is critical.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal resistance compatibility if considering alternative manufacturers. Consult official IXYS channels for qualified replacement lists.
