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Product Detailed Parameters
- Description：IGBT PT 600V 200A PLUS247
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 100A
- Power - Max：780 W
- Switching Energy：2.7mJ (on), 6.6mJ (off)
- Input Type：Standard
- Gate Charge：450 nC
- Td (on/off) @ 25°C：39ns/295ns
- Test Condition：480V, 100A, 1.5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX120N60A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, belonging to the GenX3 A3-Class series. It utilizes silicon technology and is housed in a TO-264-3 package with screw mount installation. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V and a power dissipation rating of 830 W. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- GenX3 A3-Class technology for optimized switching performance
- Single configuration with robust thermal characteristics
- Designed for high-power conversion applications
Applications
- Power conversion systems
- Industrial motor drives
- Inverter circuits
Procurement Notes
Verify the exact part number against official IXYS documentation, as the provided knowledge base lists IXGX120N120A3 and IXGK120N60A3 but not IXGX120N60A3 specifically. Confirm package type and pinout compatibility before integration. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability.
Selection Notes
Select this component for applications requiring 600V blocking capability with 120A continuous current handling. Compare saturation voltage and switching times against alternative GenX3 variants like IXGK120N60A3 if different packaging or specific thermal resistance values are required for the heat sink design.
Part Context
This IGBT is part of the IXYS GenX3 family, which represents next-generation silicon technology for power electronics. The GenX3 line focuses on improving efficiency and reliability in medium to high-power applications, offering improved switching characteristics compared to previous generations.
Replacement Considerations
Publicly confirmed direct substitute part numbers for IXGX120N60A3 were not found in the provided data. Consider reviewing the IXGK120N60A3 or IXGX120N120A3 datasheets for potential mechanical or electrical compatibility, though voltage ratings differ in some cases.
