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Product Detailed Parameters
- Description：IGBT NPT 1700V 75A PLUS247
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 32A
- Power - Max：350 W
- Switching Energy：15mJ (off)
- Input Type：Standard
- Gate Charge：155 nC
- Td (on/off) @ 25°C：45ns/270ns
- Test Condition：1360V, 32A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：150 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX32N170H1 is a high-voltage NPT IGBT module with an integrated diode, rated for 1700 V collector-emitter voltage and 32 A continuous collector current. It utilizes a rugged NPT structure to ensure robust performance under demanding electrical conditions. The component features MOS gate drive simplicity, facilitating straightforward integration into power conversion circuits. Designed for surface-mount installation in TO-268AA packages, it supports applications requiring high current handling capabilities and reliable switching operations.
Feature Summary
- High current handling capability
- Rugged NPT structure
- MOS Gate turn-on drive simplicity
Applications
- Capacitor discharge & pulser circuits
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix H1 against official IXYS documentation to confirm package type and internal configuration. Check for recent Product Change Notices regarding packaging or material updates. Ensure compatibility with thermal management solutions suitable for the TO-268AA form factor. Confirm availability status as manufacturing schedules may vary.
Selection Notes
Select this component for designs requiring high voltage isolation and significant current capacity in a compact surface-mount footprint. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal resistance requirements against the expected duty cycle and ambient temperature conditions to ensure safe operating area compliance.
Part Context
This device belongs to the IXYS high-voltage IGBT family, specifically engineered for industrial power electronics. It complements other modules like the IXGR32N170AH1 within the same series. The product line focuses on efficiency and reliability for medium-to-high power applications, leveraging advanced silicon planar technology for consistent performance across varying load conditions.
Replacement Considerations
The IXGX32N170AH1 is listed as a similar part number with comparable high-voltage IGBT specifications. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent current ratings and switching speeds match the original design requirements.
