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Product Detailed Parameters
- Description：IGBT PT 1200V 70A PLUS247
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 35A
- Power - Max：350 W
- Switching Energy：3.8mJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：50ns/180ns
- Test Condition：960V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX35N120B is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, housed in a TO-247-PLUS-3 through-hole package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 70 A. The device exhibits a collector-emitter saturation voltage of 3.3 V at rated conditions. It operates within a junction temperature range of -55°C to +150°C, with a maximum gate-emitter voltage rating of ±20 V.
Feature Summary
- GenX3 technology for optimized switching performance
- High voltage capability suitable for industrial power applications
- Robust thermal management via TO-247-PLUS-3 package
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity against manufacturer specifications before integration. Confirm that the specific lot matches the required electrical parameters. Check for any obsolescence notices or lifecycle status updates directly from the supplier. Ensure storage conditions comply with semiconductor handling standards to prevent moisture sensitivity issues during assembly.
Selection Notes
Select this component when a 1.2 kV IGBT with 70 A continuous current capacity is required. The TO-247-PLUS-3 package facilitates efficient heat dissipation for high-power designs. Consider the 3.3 V saturation voltage for conduction loss calculations. Verify compatibility with existing gate drive voltages limited to ±20 V.
Part Context
This part belongs to the IXGX35N120 family, which includes variants like the IXGT35N120B. While sharing similar electrical ratings, package differences exist between the TO-247-PLUS-3 and other form factors within the series. The IXGX35N120B specifically utilizes the PLUS-3 lead frame design for improved thermal and mechanical performance compared to standard packages.
Replacement Considerations
The IXGT35N120B is a related variant within the same series but uses a TO-268-3 surface mount package. Direct pin-to-pin replacement is not possible due to the different mounting styles and physical dimensions. Evaluate PCB layout changes if substituting.
