ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 1200V 95A PLUS247
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：95 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：4.2V @ 15V, 40A
- Power - Max：460 W
- Switching Energy：2mJ (on), 630µJ (off)
- Input Type：Standard
- Gate Charge：196 nC
- Td (on/off) @ 25°C：31ns/123ns
- Test Condition：600V, 40A, 2Ohm, 15V
- Reverse Recovery Time (trr)：75 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
Download product information
Overview
The IXGX50N120C3H1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the XPT IGBT C3-Class series, utilizing GenX3 technology for optimized switching performance. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. It is housed in a TO-247AD package with three pins and supports through-hole mounting. Key electrical parameters include a maximum power dissipation of 650 W, a collector-emitter saturation voltage of 3.2 V, and a gate-emitter voltage range of ±20 V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes XPT (eXtended Plate Technology) for low conduction losses and soft recovery characteristics.
- Incorporates GenX3 trench gate technology to enhance switching speed and reduce switching energy.
- Designed for high-voltage applications requiring robust performance and thermal stability.
Applications
- High-frequency inverters
- Uninterruptible Power Supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix H1 against official IXYS documentation to confirm pinout configuration and packaging details. Ensure compatibility with existing thermal management solutions given the 650 W power dissipation rating. Cross-reference the datasheet version to validate electrical limits before integration into circuit designs.
Selection Notes
Select this component for circuits requiring 1200 V blocking capability with moderate current handling up to 50 A. Consider the TO-247AD package for ease of heatsinking in through-hole PCB layouts. Evaluate switching frequency requirements against the device's 50 kHz specification to ensure efficient operation without excessive thermal stress.
Part Context
This part is part of IXYS' discrete IGBT lineup, specifically the XPT C3 generation. It complements other devices like the IXYX100N120C3 and IXYB82N120C3H1 within the same voltage class but offers distinct current ratings and package options tailored for different power density requirements.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify functional equivalence with other IXYS GenX3 IGBTs or comparable industry standards only after consulting the latest manufacturer cross-reference guides.
