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Product Detailed Parameters
- Description：IGBT 600V 75A PLUS247
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
- Power - Max：300 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：50ns/200ns
- Test Condition：480V, 50A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX50N60BD1 is a HiPerFAST IGBT with an integrated anti-parallel diode manufactured by IXYS. It utilizes Si technology and features a TO-264AA-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A, with a peak pulse current rating of 150 A. Power dissipation is rated at 300 W under specified conditions. The component operates within a junction temperature range from -55 °C to +150 °C.
Feature Summary
- Integrates an IGBT chip with a fast recovery anti-parallel diode in a single module.
- Utilizes HiPerFAST technology for optimized switching performance and low conduction losses.
- Designed for high-power applications requiring robust thermal management and reliable operation.
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix B1 against official IXYS documentation to confirm pinout and electrical characteristics match your design requirements. Ensure thermal interface materials are compatible with the TO-264AA-3 package surface. Confirm RoHS compliance status if required by your manufacturing standards. Check for any recent product change notices that may affect availability or specifications.
Selection Notes
Select this component when a combined switch and freewheeling diode solution is needed in a compact form factor. Consider the 600V rating and 75A continuous current capability for medium-power inverter stages. Evaluate the thermal resistance of the TO-264AA-3 package against your heatsinking strategy. Compare switching energy values with alternative devices to optimize system efficiency.
Part Context
This part belongs to the IXGX50N60 series of HiPerFAST modules. It represents a generation of integrated IGBT-diode pairs designed for higher frequency and efficiency compared to discrete solutions. The series targets industrial power conversion where space constraints and thermal performance are critical design parameters.
Replacement Considerations
Direct substitutes include IXGX50N60A2D1. Verify pin compatibility and electrical parameters before substitution. Other similar devices may require circuit modifications due to differences in switching speed or thermal characteristics.
