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The IXGX50N60C2D1 is a single HiPerFAST™ C2-Class IGBT with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). It features a TO-247 package, 600V collector-emitter voltage rating, and 75A continuous collector current. The device exhibits a maximum saturation voltage of 2.5V and supports a power dissipation of 480W. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'D1' against official datasheets to confirm pinout and thermal characteristics. Ensure sourcing channels provide original manufacturer documentation to validate authenticity and traceability before procurement.
Select this component for designs requiring combined switching and freewheeling functions within a single TO-247 footprint. Evaluate thermal management requirements based on the 480W dissipation limit and ensure gate drive compatibility with the specified voltage ratings.
Part of the IXYS HiPerFAST™ C2 series, designed for efficiency in hard-switching applications. The integration of the diode reduces parasitic inductance compared to discrete solutions, enhancing performance in high-power density systems.
Public confirmed substitute part numbers are not available in the provided source material.