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Product Detailed Parameters
- Description：IGBT NPT 2500V 170A PLUS247
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：170 A
- Current - Collector Pulsed (Icm)：530 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 150A
- Power - Max：780 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：410 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX75N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single N-channel configuration housed in a PLUS247 package, designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 2500V and a continuous collector current of 75A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.1V, a gate-emitter voltage range of -20V to +20V, and a power dissipation capacity of 937W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- High voltage capability rated at 2500V for demanding power applications
- Robust thermal performance with 937W power dissipation rating
- Single IGBT configuration integrated into a PLUS247 through-hole package
Applications
- Capacitor discharge systems
- High voltage power conversion circuits
- Industrial motor drives requiring high blocking voltage
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the PLUS247 pinout matches the target PCB footprint. Ensure the supplier provides original manufacturer documentation to validate authenticity and technical specifications before integration.
Selection Notes
Select this component for designs requiring 2500V blocking voltage with moderate current handling. Evaluate the thermal management requirements given the 937W dissipation rating. Compare the 3.1V saturation voltage against alternative devices to ensure efficiency targets are met for the specific switching frequency and load conditions.
Part Context
This part belongs to the IXYS GenX series of high-voltage IGBTs. It is engineered for robust operation in harsh environments, offering a balance of low conduction losses and high voltage tolerance suitable for heavy-duty industrial electronics and specialized power supply architectures.
Replacement Considerations
Direct substitutes may include other IXYS 2500V IGBTs in similar packages, such as the IXGH or IXGF series variants. Verify compatibility by comparing Vceo, Ic, Vce(sat), and package dimensions. Cross-referencing with equivalent offerings from other manufacturers requires careful validation of thermal and electrical limits.
