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The IXGX82N120A3 is a single N-channel IGBT from the GenX3 A3-Class series, manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-264-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 120 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 830 W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity against official IXYS documentation. Confirm package integrity and marking accuracy upon receipt. Ensure storage conditions comply with moisture sensitivity level requirements. Cross-reference datasheet revisions to confirm parameter consistency before integration into final designs.
Select this component for applications requiring 1200V blocking capability and moderate current handling. Compare saturation voltage and thermal resistance against alternative packages like TO-247 or SOT-227B based on board space constraints. Ensure gate drive voltage aligns with the specified +/- 20 V limit for optimal switching performance.
This part belongs to the IXYS GenX3 family, which integrates advanced trench gate technology. The A3 suffix typically denotes specific packaging and pinout configurations within the TO-264 form factor. It serves as a discrete solution for medium-power conversion stages where module integration is not required.
Direct replacements may include IXGK120N120A3 or IXGX120N120A3, subject to verification of exact pinout compatibility and thermal pad dimensions. Always consult the latest manufacturer datasheets to confirm functional equivalence before substitution.