IXGX82N120B3

Overview

The IXGX82N120B3 is a single N-channel silicon IGBT from the IXYS GenX3 family, housed in a TO-247AD-3 package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 82 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.96 V and a power dissipation rating of 300 W. It operates within a junction temperature range of -55°C to +150°C, with a maximum gate-emitter voltage of ±20 V.

Feature Summary

• Utilizes GenX3 trench technology for optimized switching performance
• Designed for high-voltage industrial power applications
• Provides robust thermal management capabilities

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify the specific manufacturer datasheet for the IXGX82N120B3 to confirm exact electrical parameters and mechanical dimensions before integration. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the component marking against official manufacturer documentation to prevent counterfeit parts.

Selection Notes

Select this component when a 1200V rated IGBT with approximately 82A continuous current capability is required in a TO-247AD-3 package. Consider the 2.96V saturation voltage for conduction loss calculations. Verify that the system's thermal design can handle the specified 300W power dissipation limit under expected operating conditions.

Part Context

This part belongs to the IXYS GenX3 series of fast-switching IGBTs. The 'GX' designation typically indicates a specific current and voltage class within the company's discrete transistor lineup, designed for general-purpose high-power switching applications requiring reliable performance.