IXGY2N120

Description：IGBT PT 1200V 5A TO-252AA
Series：-

SKU:e757bdaca6ac Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 5A TO-252AA
Series：-
Mfr：IXYS
Package：Bulk
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：5:00 AM
Current - Collector Pulsed (Icm)：8:00 AM
Vce(on) (Max) @ Vge, Ic：4.5V @ 15V, 5A
Power - Max：25 W
Switching Energy：600µJ (off)
Input Type：Standard
Gate Charge：9 nC
Td (on/off) @ 25°C：15ns/300ns
Test Condition：960V, 2A, 150Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252AA
Grade：-
Qualification：-

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IXGY2N120

Overview

The IXGY2N120 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS Corporation. It features a collector-emitter breakdown voltage of 1200V and a maximum continuous collector current of 5A. The device operates within a temperature range from -55°C to +150°C, with a maximum gate-emitter voltage of ±20V. It exhibits a collector-emitter saturation voltage of 3V and is housed in a TO-252AA package.

Feature Summary

High voltage capability for robust power switching applications
Low saturation voltage for improved efficiency
Wide operating temperature range for harsh environments

Applications

Industrial motor drives
Power supply inverters
Welding equipment

Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm electrical characteristics and pinout configurations. Ensure that the TO-252AA package dimensions match your PCB layout requirements. Cross-reference absolute maximum ratings against your system's operational limits to prevent device failure under transient conditions.

Selection Notes

Select this component when a 1200V blocking voltage and 5A current handling are required in a compact surface-mount form factor. Consider the thermal resistance of the TO-252AA package and the need for adequate heatsinking given the 3V saturation voltage at full load. Evaluate the gate charge characteristics if high-frequency switching performance is critical for the target application.

Part Context

This IGBT belongs to IXYS's discrete semiconductor product line, designed for medium-power industrial applications. The TO-252AA package provides a balance between thermal performance and mounting convenience. It serves as a switching element in circuits requiring reliable high-voltage isolation and controlled conduction.

Replacement Considerations

Consult official cross-reference guides for compatible parts with matching 1200V rating and 5A current capacity. Verify pin compatibility and thermal characteristics before substitution.