IXKP13N60C5

Description：MOSFET N-CH 600V 13A TO220AB
Series：CoolMOS™
Mfr：IXYS
Package：Tube

SKU:fd94e25005aa Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXKP13N60C5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 13A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXKP13N60C5

Description：MOSFET N-CH 600V 13A TO220AB
Series：CoolMOS™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id：3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IXKP13N60C5

IXKP13N60C5

Single FETs, MOSFETs Overview

The IXKP13N60C5 is a single N-Channel enhancement mode CoolMOS power MOSFET manufactured by IXYS. It features a maximum drain-source voltage (VDSS) of 600 V and a continuous drain current (ID25) of 13 A at 25°C case temperature. The device has a maximum on-state resistance (RDSon) of 300 mΩ at VGS = 10 V and ID = 6.6 A. It operates within a junction temperature range of -55°C to +150°C, with a thermal resistance from junction to case (RthJC) of 0.95 K/W.

Single FETs, MOSFETs Feature Summary

Fourth-generation CoolMOS technology providing high blocking capability and low on-resistance.
Avalanche rated for unclamped inductive switching (UIS) applications.
Low thermal resistance achieved through reduced chip thickness.
Ultra-low gate charge characteristics.

Single FETs, MOSFETs Applications

Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding equipment
Inductive heating systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as datasheet documentation references both TO-247 and TO-220 AB physical dimensions and mounting torque specifications. Confirm component authenticity against the manufacturer's trademark notices. Ensure design parameters align with the specified test conditions for electrical ratings.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling up to 13A. The low RDSon and avalanche rating make it suitable for robust switching applications. Verify that the chosen package matches the thermal management requirements and PCB layout constraints defined in the mechanical drawings.

Single FETs, MOSFETs Part Context

This part belongs to the IXKP series of CoolMOS power MOSFETs. It utilizes silicon technology and is housed in a through-hole package configuration. The device is an enhancement mode transistor designed for high-efficiency power switching applications where low conduction losses are critical.