IXRH40N120

$17.12

Description：IGBT NPT 1200V 55A TO-247AD
Series：-

SKU:b27c17a5e989 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 55A TO-247AD
Series：-
Mfr：IXYS
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：55 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 30A
Power - Max：300 W
Switching Energy：3mJ (on), 700µJ (off)
Input Type：Standard
Gate Charge：90 nC
Td (on/off) @ 25°C：-
Test Condition：600V, 35A, 15Ohm, 15V
Reverse Recovery Time (trr)：2.1 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXRH40N120

Overview

The IXYS IXRH40N120 is a single NPT (non-punch-through) silicon IGBT with monolithically integrated reverse-blocking capability, housed in a TO-247AD package. It features a collector-emitter voltage rating of ±1200 V and a continuous collector current of 55 A at 25°C case temperature. The device exhibits a typical saturation voltage of 2.3 V and supports a maximum junction temperature of 150°C.

Feature Summary

Monolithic integration of a reverse-blocking diode eliminates the need for external series components
Soft reverse recovery characteristics of the internal diode reduce switching stress
Positive temperature coefficient of saturation voltage ensures stable parallel operation

Applications

Current source inverters
Matrix converters
Bi-directional switches
Resonant converters
Induction heating systems

Procurement Notes

Verify component authenticity through authorized IXYS channels or certified distributors. Confirm that the specific order matches the exact part number to ensure correct electrical ratings and package dimensions. Review the official datasheet for updated thermal limits and mounting torque specifications before finalizing procurement orders.

Selection Notes

Select this component when bidirectional blocking capability is required within a single package. The positive temperature coefficient aids in current sharing during parallel configurations. Ensure the gate drive circuit accommodates the specified ±20 V maximum rating and the thermal design accounts for the 300 W power dissipation limit at 25°C case temperature.

Part Context

This device belongs to the IXYS IXRH series of high-voltage IGBTs designed for robust industrial power conversion. It utilizes non-punch-through technology to provide reliable performance under inductive load conditions. The integrated diode functionality distinguishes it from standard unidirectional IGBTs in the same voltage class.

Replacement Considerations

Direct substitutes require matching the ±1200 V rating, TO-247AD package, and integrated reverse-blocking diode feature. Verify that alternative devices offer comparable soft recovery characteristics and similar saturation voltage parameters to maintain system efficiency and switching behavior.