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Product Detailed Parameters
- Description：IGBT 1200V 45A ISOPLUS247
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：ISOPLUS247™
- Grade：-
- Qualification：-
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Overview
The IXYS IXRR40N120 is a single Reverse Blocking IGBT (RIGBT) housed in an ISOPLUS247 package. It features a collector-emitter voltage rating of 1200 V and a typical saturation voltage of 2.5 V at 25°C. The device supports a continuous collector current of 45 A at 25°C and 28 A at 90°C case temperature. Switching characteristics include a typical turn-off time of 70 ns and a reverse recovery time of 1600 µs at 125°C.
Feature Summary
- Reverse blocking capability eliminates the need for external anti-parallel diodes in specific circuit topologies.
Applications
- High-voltage DC-DC converters
- Resonant converter designs
- Induction heating systems
Procurement Notes
Verify the active status and exact package marking against the official IXYS datasheet before procurement. Confirm thermal management requirements align with the specified current ratings at operating temperatures. Ensure sourcing channels provide genuine components to avoid counterfeit risks associated with power semiconductors.
Selection Notes
Select this component when reverse blocking functionality is required within a single discrete package. Evaluate the trade-off between the 1600 µs reverse recovery time and system efficiency requirements. Compare thermal resistance values against alternative packages if space constraints differ from the ISOPLUS247 form factor.
Part Context
This device belongs to the IXYS Reverse Blocking IGBT family, designed for applications requiring high voltage blocking in both directions. It integrates the switching transistor and reverse blocking diode characteristics into one silicon structure, simplifying circuit design compared to standard IGBTs paired with separate diodes.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCES) is rated at 1200 V.
Does this component include an internal anti-parallel diode?
Yes, the IXRR40N120 features reverse blocking capability, functioning as a combined IGBT and reverse blocking diode.
What is the typical reverse recovery time?
The typical reverse recovery time (trr) is 1600 µs at a junction temperature of 125°C.
