IXSA10N60B2D1

Overview

The IXSA10N60B2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A. The device exhibits a collector-emitter saturation voltage of 2.5 V at specified test conditions. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 100 W of power. The component utilizes a D2PAK-3 (TO-263-3) surface-mount package.

Feature Summary

• Single IGBT configuration with integrated anti-parallel diode
• Designed for high-efficiency switching applications
• Robust thermal performance in compact surface-mount packaging

Applications

• Switch-mode power supplies
• Motor control drives
• Inverter circuits

Procurement Notes

Verify availability status carefully as the component is listed as End-of-Life or obsolete by the manufacturer. Confirm if existing stock remains with distributors or if alternative sourcing is required. Check RoHS compliance details through official documentation before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a 600V rated IGBT in a TO-263-3 package. Ensure the application current does not exceed the 20A continuous rating. Verify that the gate drive voltage aligns with the specified limits. Consider thermal management requirements given the 100W power dissipation capability.

Part Context

This part belongs to the IXSA10N60 series from IXYS, focusing on medium-power IGBT solutions. The series targets general-purpose switching needs. The specific model integrates standard protection features typical of the generation. It serves as a discrete solution for power conversion stages.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Evaluate other IXYS 600V IGBTs in TO-263-3 packages for pin-compatible alternatives. Cross-reference electrical parameters such as Vce(sat) and Ic ratings when selecting potential replacements.