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Product Detailed Parameters
- Description：IGBT PT 1200V 30A TO-263AA
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.75mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：30ns/148ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXSA15N120B is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter maximum voltage of 1.2 kV and a continuous collector current rating of 30 A at 25°C. The device is housed in a TO-263AA surface-mount package, also known as DPAK-3. It supports a maximum power dissipation of 150 W and operates within a junction temperature range from -55°C to +150°C. The component utilizes standard gate drive specifications with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Enhanced short-circuit safe operating area (SCSOA) capability for robust fault handling
- Surface-mount TO-263AA package design for efficient PCB integration
- High-voltage blocking performance suitable for demanding power switching applications
Applications
- Motor drive inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix and revision level against the official IXYS datasheet to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status through manufacturer documentation prior to procurement. Check for obsolescence notices or lifecycle status updates directly from the supplier to avoid supply chain disruptions during production planning.
Selection Notes
Select this component when a surface-mount IGBT with high voltage blocking capability is required. The TO-263AA package facilitates automated assembly processes compared to through-hole alternatives. Ensure the application circuit can support the specified 30 A continuous current and 150 W power dissipation limits under expected thermal conditions.
Part Context
This part belongs to the IXYS S Series, which focuses on improved short-circuit safe operating area capabilities. It serves as a high-voltage switching solution within the broader IXYS discrete semiconductor portfolio, targeting industrial power conversion needs where reliable fault tolerance is critical.
Replacement Considerations
Cross-reference with other IXYS S Series IGBTs in the TO-263AA package for potential pin-compatible alternatives. Verify that any substitute maintains equivalent voltage ratings, current capacity, and thermal characteristics.
