IXSH20N60B2D1

Overview

The IXSH20N60B2D1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED), manufactured by IXYS. It utilizes the second-generation HDMOSTM process to achieve low on-state conduction losses and guaranteed short-circuit Safe Operating Area (SOA) capability. The device features a standard JEDEC TO-247 AD package, supporting surface mounting and easy assembly via a single isolated mounting screw. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 20 A at 25°C, and a typical saturation voltage of 1.7 V.

Feature Summary

• Integrated IGBT and anti-parallel FRED in a single package for space savings
• Guaranteed short-circuit SOA capability for robust operation
• Low VCE(sat) design minimizes on-state conduction losses
• High-frequency performance suitable for resonant-mode applications

Applications

• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the specific revision level matches design requirements, as manufacturing processes may evolve. Check for RoHS compliance status and ensure the TO-247 AD package dimensions align with existing PCB footprints. Request batch-specific test reports if short-circuit ruggedness validation is critical for the application safety margin.

Selection Notes

Select this component when high switching frequency and low conduction loss are required in a compact form factor. The integrated diode eliminates the need for external freewheeling components, reducing board space and assembly complexity. Ensure the thermal management solution supports the power dissipation characteristics of the TO-247 AD package. Verify that the gate drive circuitry can handle the switching speeds without inducing excessive electromagnetic interference.

Part Context

This device belongs to the IXYS HiPerFAST IGBT family, designed for efficient power conversion. It represents a combination of high-voltage blocking capability and fast recovery characteristics, leveraging advanced semiconductor processing. The integration of the FRED diode addresses common challenges in hard-switching applications, providing a complete solution for inverter legs and synchronous rectification stages.

Replacement Considerations

Direct substitutes may include other IXYS HiPerFAST series devices with similar voltage and current ratings, such as the IXSH20N60U1, though pinout and thermal characteristics must be verified. Cross-manufacturer replacements require careful evaluation of VCE(sat), switching times, and SOA curves to ensure compatibility with existing drive circuits and thermal designs.