SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXSH24N60AU1 is a HiPerFAST IGBT with an integrated anti-parallel FRED diode, utilizing the 2nd generation HDMOSTM process. It features a JEDEC TO-247 AD package for high-frequency operation. Key electrical parameters include a collector-emitter breakdown voltage of 600 V and a continuous collector current of 24 A at 25°C. The saturation voltage (VCE(sat)) is typically low to minimize conduction losses. The device operates within a junction temperature range of -55°C to +150°C.
This component belongs to the IXYS HiPerFAST family, which integrates IGBTs with anti-parallel diodes. The specific model utilizes the 2nd generation HDMOSTM process technology. It is housed in the standard TO-247 AD package, designed for isolated mounting via a single screw.
Publicly confirmed direct substitutes include the IXSH24N60A. When replacing, verify that the alternative maintains compatibility with the TO-247 AD footprint and meets the required 600V/24A specifications for the target application.