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Product Detailed Parameters
- Description：IGBT 1200V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：9.6mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：100ns/450ns
- Test Condition：960V, 25A, 18Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXSH25N120A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 50A. The device utilizes the TO-247AD package for through-hole mounting. Key electrical parameters include a gate-emitter threshold voltage maximum of 6V, a gate-emitter maximum voltage range of -20V to +20V, and a maximum junction temperature of 150°C. The component is classified as high-speed technology.
Feature Summary
- High-speed switching capability designed for efficient power conversion
- Robust thermal performance with a maximum operating junction temperature of 150°C
- Standard gate drive configuration compatible with common control circuits
Applications
- Switch-mode power supplies
- Motor drives
- DC/DC converters
- Solar inverters
Procurement Notes
Verify the obsolete status before integration, as the component may be restricted from new designs. Confirm availability through authorized distributors, noting that lead times can vary significantly due to supply constraints. Ensure the specific suffix matches the required pinout and packaging specifications for your PCB layout.
Selection Notes
Select this IGBT for applications requiring 1200V blocking voltage and up to 50A continuous current in a TO-247AD package. Consider its high-speed characteristics for efficiency-critical designs. Evaluate thermal management requirements given the 150°C junction limit. Compare against alternative IXYS series if higher current density or different packaging is needed.
Part Context
This component belongs to the IXYS discrete semiconductor portfolio, specifically within the insulated gate bipolar transistor category. It represents silicon-based power switching technology intended for industrial and commercial power electronics. The part is distinct from IXYS's silicon carbide MOSFET lines and diode modules.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official IXYS replacement guides or datasheets for direct cross-references.
