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Product Detailed Parameters
- Description：IGBT 600V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 30A
- Power - Max：200 W
- Switching Energy：2.5mJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：60ns/400ns
- Test Condition：480V, 30A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXSH30N60AU1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 50A. The device utilizes a TO-247AD flange mount package with through-hole terminals. Key electrical parameters include a maximum gate-emitter threshold voltage of 7V, a maximum gate-emitter voltage of 20V, and a maximum operating temperature of 150°C. The component is designed for low conduction loss applications.
Feature Summary
- Insulated Gate Bipolar Transistor technology providing high efficiency switching capabilities
- Low conduction loss design optimized for power management applications
- Robust TO-247AD flange mount package ensuring secure thermal dissipation
Applications
- Industrial motor drives
- Switching power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'U1' against official IXYS documentation to confirm exact binning or revision status, as suffixes can indicate variations in testing or packaging. Ensure the source document explicitly lists this part number to avoid confusion with similar variants like IXSH30N60A. Confirm RoHS compliance status directly from the manufacturer's datasheet before procurement.
Selection Notes
Select this component when a 600V IGBT with a 50A continuous current rating is required. The TO-247AD package is suitable for high-power applications needing effective heat sinking via a flange mount. Consider the 150°C maximum junction temperature for thermal management calculations. Verify that the 7V threshold voltage aligns with the intended gate drive circuitry requirements.
Part Context
This device belongs to the IXYS IXSH series of insulated gate bipolar transistors. The series is characterized by fast switching speeds and low saturation voltages. The TO-247AD package is a standard industry form factor for medium-to-high power discrete semiconductors, facilitating easy mounting onto heatsinks for efficient thermal transfer in demanding electronic systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Consult IXYS technical support or authorized distributors for cross-reference information regarding equivalent components with matching electrical specifications and package dimensions.
