IXSH30N60B

Overview

The IXSH30N60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25°C. The device utilizes XPT technology to achieve low conduction losses, with a typical collector-emitter saturation voltage of 1.8 V. It is housed in a TO-247AD through-hole package designed for flange mounting. The component supports a maximum junction temperature of 150°C and offers short-circuit capability.

Feature Summary

• XPT technology for optimized low conduction loss
• Short-circuit safe operating area capability
• Flange mount configuration for efficient thermal management

Applications

• Induction heating systems
• High-frequency power supplies
• Motor drive inverters

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics. Confirm RoHS compliance status via manufacturer documentation. Ensure the TO-247AD package dimensions match the target PCB layout. Check for obsolescence notices as this series may be discontinued.

Selection Notes

Select this component for applications requiring robust short-circuit handling and low on-state voltage drop. The TO-247AD package facilitates direct heatsink mounting. Verify gate drive requirements align with the specified threshold voltages. Consider thermal resistance limits when designing the cooling system for continuous operation.

Part Context

This IGBT belongs to the IXSH series from IXYS, characterized by XPT technology. It is designed for medium-frequency switching applications. The series emphasizes reliability and efficiency in high-power conversion circuits. It serves as a core switching element in industrial power electronics.

Replacement Considerations

Direct substitutes include IXXH30N60B3D1. Similar alternatives from other manufacturers may require verification of pin compatibility and thermal performance.