ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 600V 48A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：550µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：30ns/130ns
- Test Condition：400V, 24A, 5Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXSH30N60B2D1 is a single Insulated Gate Bipolar Transistor (IGBT) with an integrated fast recovery diode, manufactured by IXYS. It utilizes HiPerFAST technology and is housed in a TO-247AD flange mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, a gate-emitter threshold voltage of up to 5 V, and a maximum gate-emitter voltage of ±20 V. The component supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Integrates a fast recovery diode within the IGBT structure for efficient switching applications.
- Utilizes HiPerFAST technology to optimize conduction and switching performance.
- Features a robust TO-247AD flange mount package designed for high-power thermal management.
Applications
- High-frequency power supplies
- Motor drive inverters
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix B2D1 against official datasheets to confirm pinout and electrical characteristics. Ensure the supplier provides valid RoHS compliance documentation. Check for obsolescence notices as IXYS product lines undergo periodic lifecycle changes. Confirm the package type matches the required PCB footprint before ordering.
Selection Notes
Select this component for designs requiring a 600V rated IGBT with moderate current handling capabilities. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Consider the thermal resistance of the TO-247AD package when designing heat sinks for continuous operation.
Part Context
This part belongs to the IXYS HiPerFAST family of IGBTs, which are engineered for high-efficiency power conversion. The series is widely used in industrial and consumer electronics where compact size and high reliability are critical. The TO-247AD package is standard for through-hole mounting in high-current applications.
Replacement Considerations
Direct substitutes may include other IXYS HiPerFAST devices with similar voltage and current ratings. Verify compatibility with existing gate drive circuits when replacing with different IGBT technologies. Cross-reference with STMicroelectronics or Infineon equivalents if supply constraints exist.
