SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXSH30N60C is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 55 A. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, with a gate-emitter voltage range of -20 V to 20 V. It operates within a temperature range of -55 C to +150 C.
Verify component authenticity due to End-of-Life status. Confirm datasheet revisions match design requirements. Check RoHS compliance details. Validate package integrity upon receipt. Ensure storage conditions meet manufacturer specifications.
Evaluate thermal management needs for the TO-247-3 package. Consider the 2.5 V saturation voltage for conduction losses. Verify gate drive compatibility with the specified voltage limits. Assess short-circuit withstand capability if required by the application.
This component belongs to the IXSH30N60 series from IXYS. It is designed for general-purpose high-power switching. The series offers standard IGBT performance characteristics. It serves as a discrete solution for medium-power electronics.
No public confirmed substitute part numbers are available.