IXSH30N60C

IXSH30N60C

  • Description:IGBT PT 600V 55A TO-247AD
  • Series:-

SKU:4472e84644c8 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 600V 55A TO-247AD
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):55 A
  • Current - Collector Pulsed (Icm):110 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 30A
  • Power - Max:200 W
  • Switching Energy:700µJ (off)
  • Input Type:Standard
  • Gate Charge:100 nC
  • Td (on/off) @ 25°C:30ns/90ns
  • Test Condition:480V, 30A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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IXSH30N60C

Overview

The IXSH30N60C is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 55 A. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, with a gate-emitter voltage range of -20 V to 20 V. It operates within a temperature range of -55 C to +150 C.

Feature Summary

  • Single configuration for discrete switching applications
  • Through-hole mounting via TO-247-3 package
  • Silicon-based semiconductor construction

Applications

  • Industrial motor drives
  • Power supply circuits
  • Inverter systems

Procurement Notes

Verify component authenticity due to End-of-Life status. Confirm datasheet revisions match design requirements. Check RoHS compliance details. Validate package integrity upon receipt. Ensure storage conditions meet manufacturer specifications.

Selection Notes

Evaluate thermal management needs for the TO-247-3 package. Consider the 2.5 V saturation voltage for conduction losses. Verify gate drive compatibility with the specified voltage limits. Assess short-circuit withstand capability if required by the application.

Part Context

This component belongs to the IXSH30N60 series from IXYS. It is designed for general-purpose high-power switching. The series offers standard IGBT performance characteristics. It serves as a discrete solution for medium-power electronics.

Replacement Considerations

No public confirmed substitute part numbers are available.

IXSH30N60CIXSH30N60C

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